Showing 13–24 of 165 results

1N5819LWT

SCHOTTKY BARRIER DIODE FEATURES 1N5819LWT Low Forward Voltage Drop;  Guard Ring Construction for Transient Protection;  Small Surface Mount

1N5819WS

FEATURES  Low Forward Voltage  Surface Mount device  For use in low voltage high frequency inverters and polarity

20 D Series MOV

₹250.00
Specifications:
  • Varistor Voltage: 18~1800V
  • Withstanding Surge Current: 2000~10000A
  • Model Size: 20mm
  • Fast responding to transient over-voltage<25ns

20K series MOV

₹250.00
Specifications:
  • Wide operating voltage (V1mA) range from 180V to 560V
  • Product size from 7mm to 20mm(7K,10K,14K,20K)
  • Ipp of standard and high surge type, 7K(1200/1750A), 10K(2500/3500A), 14K(4500/6000A), 20K(6500/10000A)
  • UL, TUV Safety certification
  • RoHS compliant

25d series MOV

₹250.00
Specifications:
  • Varistor Voltage: 18~1800V
  • Withstanding Surge Current: 4500~15000A
  • Model Size: 25mm
  • Fast responding to transient over-voltage<25ns

2N7002

MOSFET (N-CHANNEL) FEATURES  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

2N7002K

MOSFET (N-CHANNEL) FEATURES  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

2N7002KM

MOSFET (N-CHANNEL) FEATURES  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

2N7002KT

MOSFET (N-CHANNEL) FEATURES  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

2N7002T

N-CHANNEL MOSFET FEATURES  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and

32D Series MOV

₹250.00
Specifications:
  • Varistor Voltage: 200~1600V
  • Withstanding Surge Current: 25000A
  • Model Size: 32mm
  • Fast responding to transient over-voltage<25ns

34s Series MOV

₹250.00
Specifications:
  • Varistor Voltage: 82~1600V
  • Withstanding Surge Current: 30000~40000A
  • Model Size: 34mm
  • Fast responding to transient over-voltage<25ns